? semiconductor components industries, llc, 2011 december, 2011 ? rev. 7 1 publication order number: mmbz5221elt1/d mmbz52xxelt1g series, SZMMBZ52XXELT1G series zener voltage regulators 225 mw sot ? 23 surface mount this series of zener diodes is offered in the convenient, surface mount plastic sot ? 23 package. these devices are designed to provide voltage regulation with minimum space requirement. they are well suited for applications such as cellular phones, hand held portables, and high density pc boards. features ? 225 mw rating on fr ? 4 or fr ? 5 board ? zener voltage range ? 2.4 v to 91 v ? package designed for optimal automated board assembly ? small package size for high density applications ? esd rating of class 3 (>16 kv) per human body model ? peak power ? 225 w (8 x 20 s) ? aec ? q101 qualified and ppap capable ? sz prefix for automotive and other applications requiring unique site and control change requirements ? pb ? free packages are available mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic case finish: corrosion resistant finish, easily solderable maximum case temperature for soldering purposes: 260 c for 10 seconds polarity: cathode indicated by polarity band flammability rating: ul 94 v ? 0 maximum ratings rating symbol max unit peak power dissipation @ 20 s (note 1) @ t l 25 c p pk 225 w total power dissipation on fr ? 5 board, (note 2) @ t a = 25 c derated above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction ? to ? ambient r ja 556 c/w total power dissipation on alumina substrate, (note 3) @ t a = 25 c derated above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction ? to ? ambient r ja 417 c/w junction and storage temperature range t j , t stg ? 65 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. nonrepetitive current pulse per figure 9. 2. fr ? 5 = 1.0 x 0.75 x 0.62 in. 3. alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina. 3 cathode 1 anode see specific marking information in the device marking column of the electrical characteristics table on page 2 of this data sheet. device marking information http://onsemi.com sot ? 23 case 318 style 8 marking diagram 1 3 2 1 bxx m bxx = device code xx = (refer to page 2) m = date code* = pb ? free package (note: microdot may be in either location) *date code orientation may vary depending upon manufacturing location. device package shipping ? ordering information mmbz52xxelt3g sot ? 23 (pb ? free) 10000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. mmbz52xxelt1g sot ? 23 (pb ? free) 3000 / tape & reel SZMMBZ52XXELT1G sot ? 23 (pb ? free) 3000 / tape & reel
mmbz52xxelt1g series, SZMMBZ52XXELT1G series http://onsemi.com 2 electrical characteristics (pinout: 1-anode, 2-no connection, 3-cathode) (t a = 25 c unless otherwise noted, v f = 0.95 v max. @ i f = 10 ma) symbol parameter v z reverse zener voltage @ i zt i zt reverse current z zt maximum zener impedance @ i zt i zk reverse current z zk maximum zener impedance @ i zk i r reverse leakage current @ v r v r reverse voltage i f forward current v f forward voltage @ i f zener voltage regulator i f v i i r i zt v r v z v f electrical characteristics (pinout: 1-anode, 2-nc, 3-cathode) (v f = 0.9 v max @ i f = 10 ma for all types.) device* device marking zener voltage (note 4) zener impedance leakage current v z (v) @ i zt z zt @ i zt z zk @ i zk i r @ v r min nom max ma ma a v mmbz5221elt1/t3g be2 2.28 2.4 2.52 20 30 1200 0.25 100 1 mmbz5226elt1/t3g be7 3.13 3.3 3.47 20 28 1600 0.25 25 1 mmbz5228elt1/t3g be9 3.70 3.9 4.10 20 23 1900 0.25 10 1 mmbz5229elt1/t3g bf1 4.08 4.3 4.52 20 22 2000 0.25 5 1 mmbz5230elt1/t3g bf2 4.46 4.7 4.94 20 19 1900 0.25 5 2 mmbz5231elt1/t3g bf3 4.84 5.1 5.36 20 17 1600 0.25 5 2 mmbz5232elt1/t3g bf4 5.32 5.6 5.88 20 11 1600 0.25 5 3 mmbz5234elt1/t3g bf6 5.89 6.2 6.51 20 7 1000 0.25 5 4 mmbz5235elt1/t3g bf7 6.46 6.8 7.14 20 5 750 0.25 3 5 mmbz5236elt1/t3g bf8 7.12 7.5 7.88 20 6 500 0.25 3 6 mmbz5237elt1/t3g bf9 7.79 8.2 8.61 20 8 500 0.25 3 6.5 mmbz5239elt1/t3g bg2 8.65 9.1 9.55 20 10 600 0.25 3 7 mmbz5240elt1/t3g bg3 9.50 10 10.50 20 17 600 0.25 3 8 mmbz5242elt1/t3g bg5 11.40 12 12.60 20 30 600 0.25 1 9.1 mmbz5243elt1/t3g bg6 12.35 13 13.65 9.5 13 600 0.25 0.5 9.9 mmbz5244elt1/t3g bg7 13.30 14 14.70 9 15 600 0.25 0.1 10 mmbz5245elt1/t3g bg8 14.25 15 15.75 8.5 16 600 0.25 0.1 11 mmbz5246elt1g? bg9 15.20 16 16.80 7.8 17 600 0.25 0.1 12 mmbz5248elt1/t1g bh2 17.10 18 18.90 7 21 600 0.25 0.1 14 mmbz5250elt1/t3g bh4 19.00 20 21.00 6.2 25 600 0.25 0.1 15 4. zener voltage is measured with a pulse test current i z at an ambient temperature of 25 c. *includes sz ? prefix devices where applicable. ?mmbz5246el, mmbz5252el, and mmbz5265el not available in 10,000/tape & reel.
mmbz52xxelt1g series, SZMMBZ52XXELT1G series http://onsemi.com 3 electrical characteristics (continued) (pinout: 1-anode, 2-nc, 3-cathode) (v f = 0.9 v max @ i f = 10 ma for all types.) device* device marking zener voltage (note 5) zener impedance leakage current v z (v) @ i zt z zt @ i zt z zk @ i zk i r @ v r min nom max ma ma a v mmbz5252elt1g? bh6 22.80 24 25.20 5.2 33 600 0.25 0.1 18 mmbz5253elt1/t3g bh7 23.75 25 26.25 5 35 600 0.25 0.1 19 mmbz5254elt1/t3g bh8 25.65 27 28.35 4.6 41 600 0.25 0.1 21 mmbz5255elt1/t3g bh9 26.60 28 29.40 4.5 44 600 0.25 0.1 21 mmbz5256elt1/t3g bj1 28.50 30 31.50 4.2 49 600 0.25 0.1 23 mmbz5257elt1/t3g bj2 31.35 33 34.65 3.8 58 700 0.25 0.1 25 mmbz5258elt1/t3g bj3 34.20 36 37.80 3.4 70 700 0.25 0.1 27 mmbz5261elt1g bj6 49.35 47 44.65 2.7 105 1000 0.25 0.1 36 mmbz5262elt1/t3g bj7 48.45 51 53.55 2.5 125 1100 0.25 0.1 37 mmbz5263elt1/t3g bj8 53.20 56 58.80 2.2 150 1300 0.25 0.1 43 mmbz5265elt1g? bk1 58.90 62 65.10 2 185 1400 0.25 0.1 47 5. zener voltage is measured with a pulse test current i z at an ambient temperature of 25 c. *includes sz ? prefix devices where applicable. ?mmbz5246el, mmbz5252el, and mmbz5265el not available in 10,000/tape & reel.
mmbz52xxelt1g series, SZMMBZ52XXELT1G series http://onsemi.com 4 typical characteristics vz , temperature coefficient (mv/ c) v z , nominal zener voltage (v) ? 3 ? 2 ? 1 0 1 2 3 4 5 6 7 8 12 11 10 9 8 7 6 5 4 3 2 figure 1. temperature coefficients (temperature range ? 55 c to +150 c) typical t c values for mmbz52xxblt1g series, szmmbz52xxblt1g series v z @ i zt vz , temperature coefficient (mv/ c) 100 10 1 10 100 v z , nominal zener voltage (v) figure 2. temperature coefficients (temperature range ? 55 c to +150 c) typical t c values for mmbz52xxblt1g series, szmmbz52xxblt1g series v z @ i zt 100 v z , nominal zener voltage figure 3. effect of zener voltage on zener impedance 10 1 z zt , dynamic impedance ( ) 1000 100 10 1 t j = 25 c i z(ac) = 0.1 i z(dc) f = 1 khz i z = 1 ma 5 ma 20 ma v f , forward voltage (v) figure 4. typical forward voltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 i f , forward current (ma) 1000 100 10 1 75 v (mmbz5267blt1) 91 v (mmbz5270blt1) 150 c 75 c 25 c 0 c
mmbz52xxelt1g series, SZMMBZ52XXELT1G series http://onsemi.com 5 typical characteristics c, capacitance (pf) 100 v z , nominal zener voltage (v) figure 5. typical capacitance 1000 100 10 1 10 1 bias at 50% of v z nom t a = 25 c 0 v bias 1 v bias 12 v z , zener voltage (v) 100 10 1 0.1 0.01 10 8 6 4 2 0 t a = 25 c i z , zener current (ma) v z , zener voltage (v) 100 10 1 0.1 0.01 10 30 50 70 90 t a = 25 c i r , leakage current ( a) 90 v z , nominal zener voltage (v) figure 6. typical leakage current 1000 100 10 1 0.1 0.01 0.00 1 0.0001 0.00001 80 70 60 50 40 30 20 10 0 +150 c +25 c -55 c i z , zener current (ma) figure 7. zener voltage versus zener current (v z up to 12 v) figure 8. zener voltage versus zener current (12 v to 91 v) 100 figure 9. 8 20 s pulse waveform 90 80 70 60 50 40 30 20 10 0 020406080 t, time ( s) t p t r pulse width (t p ) is defined as that point where the peak current decay = 8 s half value i rsm /2 @ 20 s % of peak pulse current peak value i rsm @ 8 s
mmbz52xxelt1g series, SZMMBZ52XXELT1G series http://onsemi.com 6 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue ap d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c 0 ??? 10 0 ??? 10 style 8: pin 1. anode 2. no connection 3. cathode *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 mmbz5221elt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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